Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
→
Переглянути статтю

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Budzulyak, S.I. ; Ermakov, V.M. ; Kyjak, B.R. ; Kolomoets, V.V. ; Machulin, V.F. ; Novoselets, M.K. ; Panasjuk, L.I. ; Sus', B.B. ; Venger, E.F.

Інший ID: PACS: 71.30.+h

URI: http://dspace.nbuv.gov.ua/handle/123456789/117939

Посилання: Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.

Дата: 2003

Завантажень: 360

Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Анотація:

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.

Показати повний запис статті