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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase 
    Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in ...
  • Influence of low-temperature annealing on the state of CdTe surface 
    Parfenyuk, O.A.; Ilashchuk, M.I.; Chupyra, S.M.; Burachek, V.R.; Korbutyak, D.V.; Krylyuk, S.G.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances ...
  • Influence of polarization azimuth on twophoton absorption in CdS 
    Kulish, N.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    To study the dependence of the two-photon absorption coefficient β on a polarization azimuth ϕ we used the method of one light source at the ruby laser frequency. It was shown that β changes smoothly with increasing ϕ ...
  • Interband optical transitions in spherical nanoheterostructures 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework ...
  • Inversion asymmetry effect on quantum oscillations in 3-D crystals with Cnv symmetry 
    Ivchenko, V.V.; Sergeev, A.N.; Elnik, V.S.; Chuiko, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The peculiarities of quantum oscillations in bulk semiconductors with Cnv symmetry caused by the lack of their symmetry centre are considered. A quasi-qubic model is used for finding the magnetic levels. The algorithm for ...
  • Investigation of Al-ZERODUR interface by Raman and secondary ion mass spectroscopy 
    Berezhinsky, L.I.; Yukhymchuk, V.A.; Maslov, V.P.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The interface of ZERODUR ceramics and thin aluminium film was investigated by Raman and secondary ion mass-spectroscopy techniques. Possible chemical reactions at the interface is briefly analyzed and compared with ...
  • Investigation of cadmium telluride films on silicon substrate 
    Odarych, V.A.; Sarsembaeva, A.Z.; Sizov, F.F.; Vuichyk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index ...
  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method 
    Gorbatyuk, I.N.; Zhikharevich, V.V.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg₁₋x₋y₋zAxByCzTe under conditions of a modified zone melting.
  • Investigation of the physical properties of multi-component solid solutions Hg₁₋x₋y₋zAxByCzTe 
    Ostapov, S.E.; Gorbatyuk, I.N.; Zhikharevich, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents theoretical research on the basic band parameters and galvanomagnetic phenomena in multicomponent solid solutions Hg₁₋x₋yAxByCzTe, Hg₁₋x₋zCdxZnzTe and Hg₁₋x₋y₋zAxByCzTe, resulting in the empirical ...
  • LC acousto-optical transducer for nondestructive holographic control systems 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R.; Tytarenko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The construction of acousto-optical display based on the hysteretic in cholesteric liquid crystals (CLCs) is proposed for nondestructive holographic test systems. The influence oblique reactive sputtering deposited thin ...
  • Light absorption by inhomogeneous semiconductor film 
    Baraban, L.; Lozovski, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different ...
  • Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions 
    Deibuk, V.G.; Korolyuk, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. ...
  • Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation ...
  • Method for replacing objects in 4F correlator: testing 
    Yezhov, P.V.; Kuzmenko, A.V.; Smirnova, Т.N.; Ivanovskyy, A. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The method of pattern recognition based on replacement of object images incoming to the correlator by object-dependent synthesized phase objects calculated using the iterative Fourier-transform algorithm was developed by ...
  • Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment 
    Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
  • Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr 
    Vlasenko, N.A.; Belyaev, A.E.; Denisova, Z.L.; Kononets, Ya.F.; Komarov, A.V.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ...
  • Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation ...
  • Multifunctional devices based on induced polar states 
    Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Search for new pyroactive effective materials with controlled polarization properties is carried out with the goal of developing the new generation of pyroelectric sensors with extended functional capabilities. Elaborated ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...

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