Анотація:
This paper presents theoretical research on the basic band parameters and galvanomagnetic phenomena in multicomponent solid solutions Hg₁₋x₋yAxByCzTe, Hg₁₋x₋zCdxZnzTe and Hg₁₋x₋y₋zAxByCzTe, resulting in the empirical formulae for the energy gap and the intrinsic carrier concentration of these materials in a wide range of temperatures and compositions. The effective mechanisms of charge carrier scattering, concentration and activation energy of acceptor impurities have been determined. The results of theoretical research are in a good agreement with the experimental and literature data.