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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields 
    Syngaivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under ...
  • Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry 
    Chuiko, G.P.; Dvornik, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The so-called loops of extremes exist for the modification of Cd₂As₂ without the center of symmetry. The maximal spin splitting of bands is observable along a direction normal to the main crystalline axis. The number of ...
  • The influence of size effects on thin films local piezoelectric response of thin films 
    Morozovska, A.N.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We discuss the influence of size effects on the local piezoelectric response of thin films. In calculations of the electrostatic potential in the triple system “PFM probe tip – film – substrate,” the effective point ...
  • Spin polarization in semimagnetic semiconductor two barrier spin filters 
    Lev, S.B.; Sugakov, V.I.; Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures 
    Sachenko, A.V.; Sokolovskyi, I.O.; Kazakevitch, A.; Shkrebtii, A.I.; Gaspari, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in ...
  • Radiative recombination of the PVK/C60 molecular complexes with the radiation damages 
    Коbus, E.S.; Dmytrenko, O.P.; Kulish, N.P.; Prylutskyy, Yu.I.; Belyy, N.M.; Syromyatnikov, V.G.; Studzinskyy, S.L.; Zabolotnyy, M.A.; Gryn'ko, D.A.; Shchur, D.V.; Shlapatskaya, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The relaxation processes of electronic excitations in the films composed from a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes (PVC/C₆₀) with different contents of nanocluster molecules ...
  • Photoconductivity in macroporous silicon with regular structure of macropores 
    Ivanov, V.I.; Karachevtseva, L.A.; Karas, N.I.; Lytvynenko, O.A.; Parshin, K.A.; Sachenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon ...
  • Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors 
    Popovych, K.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the ...
  • Cluster morphology silicon's nanoparticle 
    Kovalchuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is proposed to use silicon polyhedral atomic clusters (ACs) in the study of nanoparticles. A scheme of the parametrized density functional theory for calculations of the atomic and electronic structures of these ...
  • Analysis of methods for high-speed forming the relief microimages on metallic substrates 
    Kryuchin, A.A.; Pankratova, A.V.; Kassko, I.A.; Nagorny, F.V.; Chirkov, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The use of methods of ion and electrochemical etching of metallic substrates to obtain relief microstructures with micron and submicron sizes is considered. Presented are the results of experimental researches of processes ...
  • Coherent thermal radiation of Fabry-Perot resonator structures 
    Kollyukh, O.G.; Kyslyi, V.P.; Liptuga, A.I.; Morozhenko, V.; Pipa, V.I.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The coherent thermal radiation from semiconductor plane-parallel resonator structures is investigated both theoretically and experimentally. The coherent properties of thermal radiation from these objects are manifested ...
  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure 
    Grushko, E.V.; Maslyanchuk, O.L.; Mathew, X.; Motushchuk, V.V.; Kosyachenko, L.A.; Streltsov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe ...
  • Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering 
    Khomenkova, L.; Korsunska, N.; Sheinkman, M.; Stara, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions ...
  • Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing 
    Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...

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