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Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 4
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Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
Інший ID:
PACS 02.70.Uu, 72.10.-d
Посилання:
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ.
Підтримка:
The authors would like to express their gratitude to
Professor V.A. Kochelap for his valuable discussions on
various aspects of this work.
Дата:
2007
Переглядів:
561
Завантажень:
242
Анотація:
The electron distribution function and transport characteristics of hot electrons
in GaN semiconductor are calculated by the Monte Carlo method. We studied the
electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
fields. We found that, at low temperatures and low electric fields (a few hundreds of
V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
the mean energy is very slowly dependent on the field. The streaming effect can occur in
bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric
fields of a few kV/cm.
