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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3 за назвою

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3 за назвою

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Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films

Kosyak, V.V.; Opanasyuk, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on ...
Calculation of the spectra of characteristic electron losses in indium bromide

Kolinko, M.O.; Bovgyra, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy ...
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

Borblik, V.L.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as ...
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation

Fedosov, A.V.; Koval, Y.V.; Jashchinskij, L.V.; Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The results of researches of the kinetic effects in crystals CdSb are presented and discussed.
Compensation of hole conductivity in CdTe crystals doped with Cr

Nikonyuk, E.S.; Zakharuk, Z.I.; Kuchma, M.I.; Kovalets, M.O.; Rarenko, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. ...
Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen

Kaminskii, V.I.; Kovalyuk, Z.D.; Netyaga, V.V.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The results of investigations of dielectric characteristics of GaSe nanocrystals and their hydrogen intercalates are presented. By using the impedance spectroscopy method, it is established that the dielectric spectra ...
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence

Savkina, R.K.; Smirnov, A.B.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall ...
Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition

Primachenko, V.E.; Fedorenko, L.L.; Tsyrkunov, Yu.A.; Zinio, S.A.; Kirillova, S.I.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

Current creation caused by water decomposition Н₂О → ОН+Н has been investigated for the case of an Yb-Si electrode pair after the preliminary covering of Si electrodes with transition metal (Ni, Ti, Cr) films, as well ...
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers

Red’ko, R.; Red’ko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 ...
Electron energy spectrum in a spherical quantum dot with smooth confinement

Holovatsky, V.; Voitsekhivska, O.; Gutsul, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass ...
Electron, hole, and exciton spectra in a quantum wire crossing the quantum well

Makhanets, O.M.; Gryschuk, A.M.; Tkach, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor ...
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

Danilyuk, A.I.; Dobrovolskiy, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly ...
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

Moskvin, P.P.; Rashkovetsky, L.V.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence ...
Information conception of image perception at solid-state lighting

Osinsky, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

An information-technological approach to the development of integral white light sources is introduced. It is based on the technology of epitaxial growth of nanostructures in multicomponent solid-state solutions of A³B⁵ ...
Local properties of impurity and defects investigated by high pressure spectroscopy

Grinberg, Marek (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ...
Obtaining and optical properties of the glasses of the GeS₂–HgS system

Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses

Shpotyuk, O.I.; Vakiv, M.M.; Butkiewicz, B.; Kovalskiy, A.P.; Golovchak, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As₂S₃-GeS₂ and non-stoichiometric As₂S₃-Ge₂S₃ systems. A ...
Optical investigation of the electronic structure of alloys Сu-Fе

Vovchenko, V.V.; Staschuk, V.S.; Poperenko, L.V.; Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We investigate the optical properties of Cu-Fe alloys in a wide interval of concentrations (7.5–30 at. %) and in a wide spectral interval (0.25–7 µm). An additional absorption associated with interband electron transitions ...
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

Moscal, D.S.; Fedorenko, L.L.; Yusupov, M.M.; Golodenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a ...

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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3 за назвою

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