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Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
Інший ID:
PACS 71.10.-W
Посилання:
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ.
Дата:
2007
Переглядів:
720
Завантажень:
384
Анотація:
We used the method of nets to calculate the thermoelastic stresses on the GaAs
surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
with diffraction spatial intensity modulation from a shield with rectangular cut. The
structure of irradiated subsurface layers of samples was studied by the AFM method. A
periodic islet structure formed in the process of diffusive redistribution of defects was
revealed by the level-by-level chemical etching.
