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Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
Інший ID:
PACS 61.71.-y, 71.55.-I
Посилання:
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ.
Підтримка:
The authors are grateful to Drs. I.N. Arsent’ev and
V.P. Ulin for the provision of samples and to Dr.
V.V. Milenin for his permanent interest to our work and
the fruitful discussions.
Дата:
2007
Переглядів:
676
Завантажень:
499
Анотація:
To study the influence of microwave irradiation on a spectrum of defect states
in porous InP, we have measured the luminescence spectra within the range 0.50 to
2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power
density of 7.5 W/cm²
. We have obtained that the spectra of defects in researched samples
are essentially changed as well as the concentrations of local centers. Possible mechanisms
of observable changes in the semiconductor impurity-defect composition caused
by a microwave treatment are discussed.
