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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за автором "Milenin, V.V."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за автором "Milenin, V.V."

Сортувати за: Порядок: Результатів:

  • Defect reorganization induced by pulsed magnetic field in porous InP 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...

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