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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Сортувати за: Порядок: Результатів:

  • Relaxation process features of photoconductivity in p-i-n structures 
    Mumimov, R.A.; Kanyazov, Sh.K.; Saymbetov, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of ...
  • Scattering and birefringence properties of polymeric films modified with nanoparticles of different nature 
    Agabekov, V.E.; Ivanova, N.A.; Kosmacheva, T.G.; Dlugunovich, V.A.; Tsaruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Scattering properties of directed polyvinyl alcohol films modified with titanium dioxide or silver nanoparticles and illuminated by a 0.63 μm linear polarized He-Ne laser radiation were investigated. Ability of the ...
  • Self-organized nanostructured anodic oxides for display applications 
    Jaguiro, P.; Stsiapanau, A.; Hubarevich, A.; Mukha, Y.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Electrochemical technologies have a high potential for display applications because of their cheapness and simplicity, easiness to scaling to large substrates and lowtemperature nature. However, in major display technologies ...
  • SERS of dye film deposited onto gold nano-clusters 
    Grytsenko, K.; Kolomzarov, Yu.; Lytvyn, O.; Doroshenko, T.; Strelchuk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Gold nanoclusters were obtained by co-deposition of and polytetrafluoroethylene (PTFE) in vacuum with various gold concentrations. The films deposited were undergone to heating at various temperatures in air. Transformation ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics 
    Ivashchenko, O.M.; Shwarts, Yu.M.; Shwarts, M.M.; Kopko, D.P.; Sypko, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Shown in this paper is the efficiency of a smoothing cubic spline approximation for temperature response curves (TRC) of wide range silicon diode thermometers (SDTs). The offered calculation algorithm allows to describe ...
  • Spin-dependent current in silicon p-n junction diodes 
    Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface ...
  • Splitting the eigenvectors space for Kildal’s Hamiltonian 
    Chuiko, G.P.; Don, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The rational canonical form of Kildal’s Hamiltonian has been obtained as a matrix with two identical diagonal blocks. It allowed to formulate and strictly prove few common assertions. Each of the eigenvalues of Kildal’s ...
  • Sponge-like nanostructured silicon for integrated emitters 
    Hubarevich, A.; Jaguiro, P.; Mukha, Y.; Smirnov, A.; Solovjov, Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. ...
  • Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry 
    Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines ...
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • Thermal simulation of heterogeneous structural components in microelectronic devices 
    Gavrysh, V.I.; Fedasyuk, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The steady state nonlinear problem of thermal conduction for isotropic strip with foreign rectangular inclusion that heats as an internal thermal source with heat dissipation has been considered. The methodology to solve ...
  • The study of solar cells with back side contacts at low illumination 
    Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...
  • Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination 
    Borovytsky, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...
  • Wavelet analysis for polarization maps of networks formed by liquid biological crystals in blood plasma: statistical and fractal approaches 
    Bachinsky, V.T.; Ushenko, Yu.O.; Tomka, Yu.Ya.; Dubolazov, O.V.; Balanets’ka, V.O.; Karachevtsev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this paper are the possibilities of local wavelet analysis for polarization-inhomogeneous images inherent to blood plasma of healthy and oncologically ill patients. Determined is the set of statistical, ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...
  • Zero bias terahertz and subterahertz detector operating at room temperature 
    Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...
  • Сhemiluminescent display 
    Jaguiro, P.; Stsiapanau, A.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Investigation of organic liquid phase electroluminescence (traditionally, the so-called “electro-chemiluminescence” or “electrogenerated chemiluminescence”) is of special interest as a competitor for “liquid” and “solid” ...

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