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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge 
    Dmitruk, N.L.; Borkovskaya, O.Yu.; Havrylenko, T.S.; Naumenko, D.O.; Petrik, P.; Meza-Laguna, V.; Basiuk, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) ...
  • Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor 
    Vlasov, S.I.; Saparov, F.A.; Ismailov, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects ...
  • Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when ...
  • Effect of strong magnetic field on surface polaritons in ZnO 
    Venger, E.F.; Ievtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the attenuated total reflectance technique, we studied the effect of strong uniform magnetic field H on the main properties of surface polaritons in ZnO single crystals. The used orientations were C || y , k ⊥ C , ...
  • Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure 
    Borkovska, L.V.; Stara, T.R.; Korsunska, N.O.; Pechers’ka, К.Yu.; Germash, L.P.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures ...
  • Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure 
    Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. ...
  • Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 
    Bunak, S.V.; Buyanin, A.A.; Ilchenko, V.V.; Marin, V.V.; Melnik, V.P.; Khacevich, I.M.; Tretyak, O.V.; Shkavro, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth ...
  • Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys 
    Shukla, S.; Kumar, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin ...
  • Electron-hole Fermi liquid in nanosized semiconductor structures 
    Litovchenko, V.G.; Grygoriev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium ...
  • Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch 
    Elkadadra, A.; Abouelaoualim, D.; Oueriagli, A.; Outzourhit, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined ...
  • Elimination of the data-dependent defects by doubling the frequency of driving signals for cholesteric LCDs 
    Rybalochka, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the standard waveform composition method for 2+2 dynamic drive schemes results in the dependence of image contrast on image data-content. In this paper, an implementation of this standard method with doubling the ...
  • Experimental studies of light-wave phase shift by polymer dispersed liquid crystal films 
    Dmitriev, S.M.; Dick, V.P.; Kostyuk, N.N.; Dick, T.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Polymermethacrylate (PMMA) and polyvinyl butyral (PVB) thin films with the dispersed liquid crystal droplets are prepared by the described technique. The measurements of light wave polarization-independent phase shift ...
  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in ...
  • Growth and optical properties of dye films and dye-in-polymer matrix deposited by vacuum evaporation 
    Grytsenko, K.; Doroshenko, T.; Kolomzarov, Yu.; Lytvyn, O.; Serik, M.; Tolmachev, O.; Slominski, Yu.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Searching new more effective materials for organic electroluminescent displays is continuing. The polymethine dyes is a class of organic materials that are very interesting for these purposes. Films of the polymethine ...
  • Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal 
    Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • Hydrogen gettering in annealed oxygen-implanted silicon 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Impurity scattering of band carriers 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...
  • Increase of data protection level for visual information in control systems 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Formalized description of data transmission between technical means and an operator from the viewpoint of information security is presented. The most widely used symbolic and bar graph data representation forms are ...

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