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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Rarenko, I.M."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Rarenko, I.M."

Сортувати за: Порядок: Результатів:

  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes 
    Kosyachenko, L.A.; Rarenko, I.M.; Bodnaruk, O.O.; Frasunyak, V.M.; Sklyarchuk, V.M.; Sklyarchuk, Ye.F.; Sun Weiguo; Lu Zheng Xiong (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion ...
  • Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content 
    Kosyachenko, L.A.; Rarenko, I.M.; Aoki, T.; Sklyarchuk, V.M.; Maslyanchuk, O.L.; Yurtsenyuk, N.S.; Zakharuk, Z.І. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10⁴– 10⁸ Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences ...
  • Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals 
    Ostapov, S.E.; Rarenko, I.M.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient ...
  • State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type 
    Dremlyuzhenko, S.G.; Zakharuk, Z.I.; Rarenko, I.M.; Srtebegev, V.M.; Voloshchuk, A.G.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause ...

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