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State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1
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State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type
Інший ID:
PACS: 79.20.Rf; 79.60.Bm
Посилання:
State of Cd₁₋xZnxTe and Cd₁₋xMnxTe surface depending on treatment type / S.G. Dremlyuzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 52-55. — Бібліогр.: 9 назв. — англ.
Підтримка:
The financial support of the Civilian Research and Development Foundation (grant UP2-536) and the Science and Technology Center of Ukraine (grant №1440) is gratefully acknowledged.
Дата:
2004
Переглядів:
725
Завантажень:
342
Анотація:
The morphology and composition of Cd₁₋xZnxTe and Cd₁₋xMnxTe solid solutions surfaces after different types of surface treatment were investigated. Chemical etching of the surfaces and polishing by diamond pastes cause change of surface stoichiometry and ontamination
of surface layer by carbon and etchant components. Potentiometer studies were carried out to study the processes that take place on the interface "semiconductor-electrolyte". A prediction of phase composition of oxide films on Cd₁₋xZnxTe and Cd₁₋xMnxTe surfaces was made and a mechanism of their dissolution was determined. It was found that chemicomechanical polishing by alkaline colloidal silica compositions is an optimal surface treatment procedure. Chemico-mechanical polishing with this mixture gives a uniform surface without essential change of surface stoichiometry and fouling of the surface layer by etchant components.
