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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Bacherikov, Yu.Yu."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Bacherikov, Yu.Yu."

Сортувати за: Порядок: Результатів:

  • Bacherikov, Yu.Yu.; Davydenko, M.O.; Dmytruk, A.M.; Dmitruk, I.M.; Lytvyn, P.M.; Prokopenko, I.V.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Modified reverse micelles method allowing fabrication of CdSe nanoparticles in toluene solution in series of sizes with average diameter from 1.2 to 3.2 nm and size distribution ∼ 12-30 % is presented. Simple empirical ...
  • Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Bacherikov, Yu.Yu.; Konakova, R.V.; Kolyadina, E.Yu.; Kocherov, A.N.; Okhrimenko, O.B.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of ...
  • Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Photo- and electroluminescence properties of ZnS obtained using selfpropagating high-temperature synthesis and doped with Cu were studied in this work. It has been shown that high-temperature one-stage synthesis enables ...
  • Bacherikov, Yu.Yu.; Okhrimenko, O.B.; Zhuk, A.G.; Kurichka, R.V.; Gilchuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and ...
  • Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Bacherikov, Yu.Yu.; Zelensky, S.E.; Zhuk, A.G.; Semenenko, N.A.; Krylova, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Fine-dispersed ZnS doped with Cu was prepared using self-propagating hightemperature synthesis. In the photoluminescence excitation spectra, the blue shift of the host lattice excitation peak is observed for powder ZnS:Cu ...
  • Sapaev, B.; Saidov, A.S.; Bacherikov, Yu.Yu.; Konakova, R.V.; Okhrimenko, O.B.; Dmitruk, I.N.; Galak, N.P.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed ...
  • Bacherikov, Yu.Yu.; Zhuk, A.G.; Optasyuk, S.V.; Okhrimenko, O.B.; Kardashov, K.D.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the ...

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