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Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 4
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Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis
Інший ID:
PACS 78.55.Et, 78.67.Bf
Посилання:
Luminescent properties of fine-dispersed ZnS:Cu
prepared using self-propagating high-temperature synthesis / Yu.Yu. Bacherikov, S.E. Zelensky, A.G. Zhuk, N.A. Semenenko, O.S. Krylova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 374-379. — Бібліогр.: 31 назв. — англ.
Підтримка:
The authors are grateful for the financial support of
Open Company “Technocrat”.
Дата:
2014
Переглядів:
853
Завантажень:
469
Анотація:
Fine-dispersed ZnS doped with Cu was prepared using self-propagating hightemperature
synthesis. In the photoluminescence excitation spectra, the blue shift of the
host lattice excitation peak is observed for powder ZnS:Cu that contains nano- and mesosized
(submicron) particles. The obtained spectra indicate that radiative recombination in
meso-sized particles is significantly reduced as compared to micro-sized particles, which
can be caused by the increase of non-radiative relaxation processes in surface states.
