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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Characteristics of interface corrugations in short-period GaAs/AlAs superlattices 
    Daweritz, L.; Grahn, H.; Hey, R.; Jenichen, B.; Ploog, K.; Korbutyak, D.; Krylyuk, S.; Kryuchenko, Yu.; Litovchenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    GaAs/AlAs supelattices with corrugated interfaces have been investigated by the polarized photoluminescence method. Using the theoretical approach, which associates the linear polarization of exciton photoluminescence with ...
  • Characteristics of optical limiting in media with nonlinear absorption and scattering 
    Zelensky, S.E.; Kolesnik, O.S.; Kopyshinsky, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A comparative study is performed for characteristics of optical limiting in the media with nonlinear absorption and scattering with the use of nanosecond-scale laser pulses. Two methods are proposed to analyze of experimental ...
  • Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation 
    Fedosov, A.V.; Koval, Y.V.; Jashchinskij, L.V.; Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of researches of the kinetic effects in crystals CdSb are presented and discussed.
  • Characteristics of thermal lens induced in active rod of cw Nd:YAG laser 
    Khizhnyak, A.; Galich, G.; Lopiitchouk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The structure of thermal lens induced in active rod of cw Nd: YAG laser was investigated using the Mach-Zehnder interferometer and electronic speckle pattern interferometry (ESPI) system. It is shown that thermal lens has ...
  • Characterization and optical properties of organic dye films as recording media 
    Kravets, V.G.; Vinnichenko, K.L.; Prygun, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Efficiency of medium choice for optical information recording is generally determined by homogeneity degree of material on the recording surface and by its structure on the film depth. In this respect pyrosolynes should ...
  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation 
    Houk, Y.; Nazarov, A.N.; Turchanikov, V.I.; Lysenko, V.S.; Andriaensen, S.; Flandre, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the ...
  • Characterization of grain boundaries in CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
  • Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes 
    Kosyachenko, L.A.; Rarenko, I.M.; Bodnaruk, O.O.; Frasunyak, V.M.; Sklyarchuk, V.M.; Sklyarchuk, Ye.F.; Sun Weiguo; Lu Zheng Xiong (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion ...
  • Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate 
    Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated ...
  • Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics 
    Dmitruk, N.L.; Mayeva, O.I.; Korovin, A.V.; Mamykin, S.V.; Sosnova, M.V.; Yastrubchak, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The optical properties of multilayer structures consisting of dielectric, conductivity-oxide and nanoscaled metal layers, deposited on the planar substrates (witness samples) and surface relief ones (diffraction gratings) ...
  • Characterization of quaternary chalcogenide As-Ge-Te-Si thin films 
    Amer, H.H.; Elkordy, M.; Zien, M.; Dahshan, A.; Elshamy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin ...
  • Characterization of «solar» multicrystalline silicon by local measurements 
    Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon 
    Gutsulyak, B.I.; Oliynych-Lysyuk, A.V.; Fodchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied ...
  • Charge carrier generation in photosensitive amorphous molecular semiconductors 
    Zabolotny, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed ...
  • Charge characteristics of the MOS structures with oxide films containing Si nanocrystals 
    Begun, E.V.; Bratus’, O.L.; Evtukh, A.A.; Kaganovich, E.B.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage ...
  • Charge storage characteristics of gold nanoparticles embedded in alumina matrix 
    Bratus, O.; Evtukh, A.; Kaganovich, E.; Kizjak, A.; Kizjak, I.; Manoilov, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The processes of charge accumulation in the nonvolatile memory metal-oxidesilicon capacitors with gold nanoparticles floating gate formed by the pulsed laser deposition method are investigated. The regularities of formation ...
  • Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ 
    Kondrat, O.; Popovich, N.; Dovgoshej, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. ...
  • Charge transport in bismuth orthogermanate crystals 
    Bochkova, T.M.; Plyaka, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa electrodes have been measured in the modes of double and unipolar injection of charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation ...
  • Chemical bonding and optical bowing in III-nitrides solid solutions 
    Voznyy, O.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Chemical bonding and electronic properties of III-nitrides solid solutions are studied using a model empirical pseudopotential method in modified virtual crystal approximation taking into account positional and compositional ...

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