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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • X-ray characterization of ZnSe single crystals doped with Mg 
    Fedorov, A.G.; Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...
  • X-ray dosimetry of copper-doped CdGa₂S₄ single crystals 
    Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...
  • X-ray study of dopant state in highly doped semiconductor single crystals 
    Shul’pina, I.L.; Kyutt, R.N.; Ratnikov, V.V.; Prokhorov, I.A.; Bezbakh, I.Zh.; Shcheglov, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of ...
  • Zero bias terahertz and subterahertz detector operating at room temperature 
    Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...
  • Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method 
    Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...
  • ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure 
    Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...
  • ZnTe-based UV sensors 
    Pavelets, S.Yu.; Bobrenko, Yu.N.; Semikina, T.V.; Sheremetova, G.I.; Atdaiev, В.S.; Krulikovska, K.B.; Mazin, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal ...
  • Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals 
    Pekar, G.S.; Singaevsky, А.А.; Singaevsky, А.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a ...
  • Сhemiluminescent display 
    Jaguiro, P.; Stsiapanau, A.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Investigation of organic liquid phase electroluminescence (traditionally, the so-called “electro-chemiluminescence” or “electrogenerated chemiluminescence”) is of special interest as a competitor for “liquid” and “solid” ...

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