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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Holographic interferometry as a method to study conformational changes in macromolecules 
    Barabash, Y.; Kharkyanen, V.; Zabolotny, M.; Sokolov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This paper concerns with our measurements of reaction center (RC) volume changes in the course of photoactivation using the method of holographic interferometry. As a principal value, we studied changes of a solution ...
  • Holographic interferometry under phase distortions 
    Derzhypolska, L.A.; Gnatovskiy, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An impact of non-stationary phase distortions in transfer section of a holographic interferometer on the quality of formed interference fringes in an interferogram was under investigation. A mathematical model to analyze ...
  • Hopping conductivity in GaSe monocrystals at low temperatures 
    Pashayev, A.M.; Gadjiyev, A.R.; Tagiyev, T.B.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • How the phosphorus chains impact on the vibrational properties of diphosphides ZnP₂ and CdP₂ at low temperatures 
    Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The temperature dependence of the vibrational modes in the diphosphides ZnP₂ and CdP₂ has been studied by employing IR reflectance spectroscopy within the 4…300 K temperature range in the polarized radiation. It has been ...
  • Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range 
    Zorenko, A.V.; Bychok, A.V.; Shynkarenko, V.V.; Kudryk, Ya.Ya.; Slipokurov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio ...
  • Hybrid-integrated version of solid-state components for terahertz frequency region 
    Zorenko, O.V.; Bychok, A.V.; Kryts’ka, T.V.; Kudryk, Ya.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters ...
  • Hydrogen gettering in annealed oxygen-implanted silicon 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Hydrogenic impurity in a bilayer spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion ...
  • Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers 
    Nazarov, A.N.; Lysenko, V.S.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial ...
  • Hydrothermal synthesis and properties of titania nanotubes doped with Fe, Ni, Zn, Cd, Mn 
    Kulish, M.R.; Struzhko, V.L.; Bryksa, V.P.; Murashko, A.V.; Il’in, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Fe/TiO₂, Mn/TiO₂, Zn/TiO₂, Cd/TiO₂, Ni/TiO₂ titania nanotubes were synthesized by the method of direct hydrothermal synthesis. Their properties have been investigated using X-ray phase analysis and X-ray fluorescent analysis, ...
  • III-V material solar cells for space application 
    Torchynska, T.V.; Polupan, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Image infrared converters based on ferroelectric- semiconductor thin-layer systems 
    Sosnin, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some questions concerning pyroelectric sensors application in microphotoelectronics are considered. Data upon main characteristics of different pyroelectric materials (single crystals, ceramics, thin films) are summarized. ...
  • Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs 
    Rana, A.K.; Chand, N.; Kapoor, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Semiconductor devices with a low gate leakage current are preferred for low power application. As the devices are scaled down, sidewall spacer for CMOS transistor in nano-domain becomes increasingly critical and plays ...
  • Impedance anisotropy and quantum photocapacity of bio/inorganic clathrates InSe〈histidine〉 and gase〈histidine〉 
    Ivashchyshyn, F.O.; Grygorchak, I.I.; Klapchuk, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Intercalated nanostructures of InSe〈histidine〉 and GaSe〈histidine〉 were formed. Phenomena of the negative capacitance and the quantum capacitance are visualized in the first nanostructure. The introduction of histidine ...
  • Improvement of sensor response reproducibility and multistage recognition approach for samples with dominant components 
    Kruglenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A multistage recognition approach is advanced for poorly classified clusters. According to this approach, if a sample is related to a cluster that is common for several samples, then further object recognition (within ...
  • Impurity scattering of band carriers 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...
  • InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G.; Lisitsa, M.P.; Lavoric, S.R.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures ...
  • Increase of data protection level for visual information in control systems 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Formalized description of data transmission between technical means and an operator from the viewpoint of information security is presented. The most widely used symbolic and bar graph data representation forms are ...

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