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Hopping conductivity in GaSe monocrystals at low temperatures
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4
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Hopping conductivity in GaSe monocrystals at low temperatures
Інший ID:
PACS: 72.20.F; 73.50.F; 84.37
Посилання:
Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ.
Підтримка:
The authors express grateful acknowledgement to Prof. Gashimzadeh F.М. for useful discussions of experimental results.
Дата:
2001
Переглядів:
965
Завантажень:
502
Анотація:
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm•cm, concentration of impurities is 10¹⁵ and 2.0×10¹⁶ cm⁻³, mobilities are equal to 25.0 and 12.0 cm2/V•sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2×10⁻³ eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8×10⁻² eV, and it is connected with hole transfer in empty band.
