Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Modelling vacancy microvoid formation in dislocation-free silicon single crystals
Репозиторій DSpace/Manakin
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 4
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| dc.contributor.author | Talanin, V.I. | |
| dc.contributor.author | Talanin, I.E. | |
| dc.contributor.author | Koryagin, S.A. | |
| dc.contributor.author | Semikina, M.Yu. | |
| dc.date.accessioned | 2017-06-15T03:44:16Z | |
| dc.date.available | 2017-06-15T03:44:16Z | |
| dc.date.issued | 2006 | |
| dc.identifier.citation | Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.72Bb, 61.72.Jj, 61.72.Yx | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/121641 | |
| dc.description.abstract | An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown. | uk_UA |
| dc.description.sponsorship | This scientific work was made by the budgetary funds of Ministry of Education and Science of Ukraine as the grant of the President of Ukraine. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Modelling vacancy microvoid formation in dislocation-free silicon single crystals | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
