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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Accurate numerical modelling the GaAs MESFET current-voltage characteristics 
    Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
  • Active layer – semi-insulating substrate interface effect on GaAs MESFET components 
    Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
  • All-optical signal processing in photonic structures with shifting bands 
    Glushko, E.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the principal scheme of all-optical adder based on the dependence of electromagnetic spectra in photonic bandgap materials containing optically nonlinear layers on the light signal intensity. The system consisting ...
  • Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system 
    Tomashik, Z.F.; Lukiyanchuk, E.M.; Tomashik, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution ...
  • Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model ...
  • Development and investigation of LC light shutters for a welding automatic mask 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Elements of technology to produce liquid crystal (LC) light shutters for a welding automatic mask with the built-in transparent heater for operating LC layer were developed. Experimental samples of light shutters were ...
  • Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides 
    Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
  • Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals 
    Ostapov, S.E.; Rarenko, I.M.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient ...
  • Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass 
    Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy 
    Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals 
    Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Paramagnetic defects related to photoluminescence in SiOx films 
    Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Photoelectrical characteristics of two-dimensional macroporous silicon structures 
    Karachevtseva, L.A.; Onischenko, V.F.; Karas, M.I.; Dandur’yants, O.I.; Sizov, F.F.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode ...
  • Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation 
    Mahdjoub, A.; Bouredoucen, H.; Djelloul, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. ...
  • Radiation effects on electronic circuits in a spatial environment 
    Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals 
    Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Recording the high efficient diffraction gratings by using He-Cd laser 
    Kostyukevych, S.A.; Morozovska, A.N.; Minko, V.I.; Shepeliavyi, P.E.; Kudryavtsev, A.A.; Rubish, V.M.; Rubish, V.V.; Tverdokhleb, I.V.; Kostiukevych, A.S.; Dyrda, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 ...

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