Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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| dc.contributor.author | Maronchuk, I.E. | |
| dc.contributor.author | D’yachenko, A.M. | |
| dc.contributor.author | Minailov, A.I. | |
| dc.contributor.author | Kurak, V.V. | |
| dc.contributor.author | Chorny, I.V. | |
| dc.date.accessioned | 2017-06-05T09:36:38Z | |
| dc.date.available | 2017-06-05T09:36:38Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 73.40.Lq | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119216 | |
| dc.description.abstract | Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented. | uk_UA |
| dc.description.sponsorship | The researches described in this publication were possible partly by Grant Award # UE2-2225 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF). The authors also thank Yu. Jegerya for valuable contribution to obtaining the STM-images of QDs. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
