Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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dc.contributor.author	Abdizhaliev, S.K.
dc.contributor.author	Ismailov, K.A.
dc.contributor.author	Kamalov, A.B.
dc.contributor.author	Kudrik, Ya.Ya.
dc.date.accessioned	2017-05-28T06:15:27Z
dc.date.available	2017-05-28T06:15:27Z
dc.date.issued	2003
dc.identifier.citation	Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 84.40.-x
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118018
dc.description.abstract	We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA