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dc.contributor.author Hartnagel, H.
dc.date.accessioned 2017-05-27T16:49:34Z
dc.date.available 2017-05-27T16:49:34Z
dc.date.issued 2003
dc.identifier.citation Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 79.70.+q
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/117943
dc.description.abstract A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials. uk_UA
dc.description.sponsorship This work was supported in part by the DLR (BMBF) in connection with German-Ukrainian projects (UKR 01/053) entitled "Electron Emission Properties of the DLC Films and C-Nanotubes" and in part by the "Deutsche Forschungsgemeinschafit (DFG)" in connecntion with a special research project (SFB 241) on innovative mechatronics. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Electron emission modulation effects in micro-size structures uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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