High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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dc.contributor.author	Krukovsky, S.I.
dc.contributor.author	Zayachuk, D.M.
dc.contributor.author	Rybak, O.V.
dc.contributor.author	Mryhin, I.O.
dc.date.accessioned	2017-05-27T16:48:08Z
dc.date.available	2017-05-27T16:48:08Z
dc.date.issued	2003
dc.identifier.citation	High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.61.Ey
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117942
dc.description.abstract	Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	High-resistance low-doped GaAs and AlGaAs layers obtained by LPE	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA