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періодичних видань НАН України
періодичних видань НАН України
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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- Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
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| dc.contributor.author | Belyaev, A.A. | |
| dc.contributor.author | Belyaev, A.E. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Vitusevich, S.A. | |
| dc.contributor.author | Milenin, V.V. | |
| dc.contributor.author | Soloviev, E.A. | |
| dc.contributor.author | Kravchenko, L.N. | |
| dc.contributor.author | Figielski, T. | |
| dc.contributor.author | Wosinski, T. | |
| dc.contributor.author | Makosa, A. | |
| dc.date.accessioned | 2017-05-27T16:05:47Z | |
| dc.date.available | 2017-05-27T16:05:47Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes/ A.A. Belyaev, A.E. Belyaev, R.V. Konakova, S.A. Vitusevich, V.V. Milenin, E.A. Soloviev, L.N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa// Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 98-101. — Бібліогр.: 19 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 73.61, 85.30.M | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117928 | |
| dc.description.abstract | The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped layers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution. | uk_UA |
| dc.description.sponsorship | This work was supported by STCU under Grant No.464. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Radiation hardness of AlAs/GaAs-based resonant tunneling diodes | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
