Silicon-on-insulator technology for microelectromechanical applications

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
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dc.contributor.author	Usenko, A.Y.
dc.contributor.author	Carr, W.N.
dc.date.accessioned	2017-05-27T16:04:41Z
dc.date.available	2017-05-27T16:04:41Z
dc.date.issued	1999
dc.identifier.citation	Silicon-on-insulator technology for microelectromechanical applications / A.Y. Usenko, W.N. Carr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 93-97. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117927
dc.description.abstract	A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.	uk_UA
dc.description.sponsorship	This work is partially funded by US Ballistic Missile Defense Organization Contract № DASG60-98-M-0127.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Silicon-on-insulator technology for microelectromechanical applications	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA