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Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
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Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
Інший ID:
PACS 73.40.Ns; 73.40.Cg, 85.40.-e
Посилання:
Effect of microwave radiation on I-V curves and contact resistivity
of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ.
Підтримка:
This work was supported by the Project III-41-12.
Дата:
2013
Переглядів:
815
Завантажень:
491
Анотація:
We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN
with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect
of microwave treatment on their electrophysical properties. After microwave treatment
for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to
AlN (GaN). This seems to result from increase of the number of structural defects in the
semiconductor near-contact region caused by relaxation of intrinsic stresses induced by
microwave radiation.
