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періодичних видань НАН України
періодичних видань НАН України
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
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| dc.contributor.author | Belyaev, A.E. | |
| dc.contributor.author | Boltovets, N.S. | |
| dc.contributor.author | Zhilyaev, Yu.V. | |
| dc.contributor.author | Zhigunov, V.S. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Panteleev, V.N. | |
| dc.contributor.author | Sachenko, A.V. | |
| dc.contributor.author | Sheremet, V.N. | |
| dc.date.accessioned | 2017-05-26T14:02:41Z | |
| dc.date.available | 2017-05-26T14:02:41Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN / A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 289-292. — Бібліогр.: 14 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 73.40.Ns; 73.40.Cg, 85.40.-e | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117734 | |
| dc.description.abstract | We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation. | uk_UA |
| dc.description.sponsorship | This work was supported by the Project III-41-12. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
