Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Kavetskyy, T.S. | |
| dc.date.accessioned | 2017-05-26T09:18:15Z | |
| dc.date.available | 2017-05-26T09:18:15Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.43.Fs | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117682 | |
| dc.description.abstract | Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps components are observed in positron annihilation lifetime spectroscopy. | uk_UA |
| dc.description.sponsorship | The author would like to thank Prof. Volodymyr Tsmots (Drohobych Ivan Franko State Pedagogical University) for stimulating discussions. This work is supported in part by the State Fund for Fundamental Researches of Ukraine (project #F40.2/019). | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
