Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
→
Переглянути статтю

dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Pilipenko, V.A.
dc.contributor.author	Anischik, V.M.
dc.contributor.author	Petlitskaya, T.V.
dc.contributor.author	Klad’ko, V.P.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Korostinskaya, T.V.
dc.contributor.author	Kapitanchuk, L.M.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Vinogradov, A.O.
dc.contributor.author	Sheremet, V.N.
dc.date.accessioned	2017-05-26T08:55:12Z
dc.date.available	2017-05-26T08:55:12Z
dc.date.issued	2013
dc.identifier.citation	Role of dislocations in formation of ohmic contacts to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Ns; 73.40.Cg, 85.40.-e
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117675
dc.description.abstract	We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconductor	uk_UA
dc.description.sponsorship	This work was supported by the State Fund for Fundamental Researches SFFR-BRFFR-2013 (Project 54.1/012).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Role of dislocations in formation of ohmic contacts to heavily doped n-Si	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA