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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown ...
  • Camorani, P.; Furier, M.; Kachkovskii, O.; Piryatinskiy, Yu.; Slominskii, Yu.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this article we report the complex investigation of perylenetetracarboxylic bisimides derivatives in water solution. The results deal with all possible concentration in wide range of temperature. The experimentally ...
  • Bilyi, O.I.; Yaremyk, R.Y.; Kiselyov, Y.M.; Novikov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the given work the algorithm of work and structure of microchip construction, intended for kinetics researches of formation of modular complexes is considered during the reaction of latex agglutination. The physical ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
  • Bobitski, Y.W.; Fitio, V.M.; Lebid, S.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Theoretical analysis was conducted with the purpose for further development of spectral-sensitive elements for fiber optic devices including sensors of physical magnitudes. Forecasting performances of such elements is ...
  • Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation ...
  • Davidenko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical ...
  • Stronski, A.V.; Vlček, M.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the investigations of As₄₀S₆₀-xSex glasses with the help of Fourier Raman spectroscopy. The results of Raman spectroscopy investigations indicate increased presence of non-stoichiometric ...
  • Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Kudin, A.P.; Kuts, V.I.; Litovchenko, P.G.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects ...
  • Romanyuk, A.; Gottler, H.; Popov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of ...
  • Kunets, V.P.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the ...
  • Gubanov, O.V.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
  • Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • Anokhov, S.; Khizhnyak, A.; Lymarenko, R.; Soskin, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We analyzed singular properties of edge dislocation waves («EDW») - the main information component of the field formed at plane wave diffraction on half-plane. It is shown that analytical structure of this wave is completely ...
  • Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity ...

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