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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...
  • Features of conduction electrons motion in the field of coherent light beams 
    Semchuk, O.Yu.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Conduction electrons moving in a non-homogeneous field of coherent light beams (CLB) are investigated. It is shown that a conduction electron simultaneously takes part in two oscillations. More exactly, an electron oscillate ...
  • GSO: Ce³⁺ scintillator with a high energy resolution 
    Bondar, V.G.; Gavrilyuk, V.P.; Konevskii, V.S.; Krivonosov, E.V.; Martynov, V.P.; Savvin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It is known that in case of registration of the scintillation light using photomultiplier energy resolution of the scintillation detector can be written as sum of three components, each of them is statistically independent ...
  • Increase of planar homogeneity of multi-silicon structures by gettering treatments 
    Litovchenko, V.G.; Efremov, A.A.; Evtukh, A.A.; Rassamakin, Yu.V.; Klyui, M.I.; Kostylov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high ...
  • Influence of plasticizer structure on stability of polystyrene scintillators optical characteristics 
    Senchishin, V.G.; Borisenko, A.Yu.; Titskaja, V.D.; Koba, V.S.; Lebedev, V.N.; Adadurov, A.F.; Osadchenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The radiation and thermal stability of optical characteristics of polystyrene scintillators modified by plasticizers based on derivatives of naphthalene, ditolylmethylene, diphenylene oxide, ether of phthalic acid and ...
  • Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide 
    Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...
  • IR spectroscopy of KBr salt and crystals 
    Goriletsky, V.I.; Mitichkin, A.I.; Belenko, L.E.; Rebrova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The IR absorption spectra of the KBr salt pellets of different purity and crystals grown of them were investigated in the region of 400…4000 cm⁻¹. It was found that by the IR spectra of the KBr salt pellets suitable for ...
  • Organosilicon luminencent compositions for scintillation detectors 
    Andryuschenko, L.A.; Goriletsky, V.I.; Grinyov, B.V.; Gavrilyuk, V.P.; Zosim, D.I.; Skripkina, V.T.; Shershykov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the ...
  • Photoluminescence of pentacene solutions in n-pentyl-n-cyanobiphenyl 
    Piryatinskiy, Yu.; Furier, M.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated photoluminescence (PL) spectra of pentacene (Pc) in the liquid- and solid-crystalline n-pentyl-n´-cyanobiphenyl (5CB) matrices. It was shown that the liquid-crystalline matrix behaves as a polar solvent ...
  • Short-wave photodetectors based on fine grain-sized poly-Si films 
    Agaev, F.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow ...
  • Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers 
    Stronski, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state ...
  • Spectral properties of reflective interference filters 
    Pervak, V.Yu.; Poperenko, L.V.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The spectral properties of band reflective interference filters are investigated. The operation of the filter is based on the method of residual rays. Angular dependences of the filter transmission bandshape on the parameters ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • X-ray characterization of ZnSe single crystals doped with Mg 
    Fedorov, A.G.; Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess ...

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