Increase of planar homogeneity of multi-silicon  structures by gettering treatments

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2
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Increase of planar homogeneity of multi-silicon structures by gettering treatments

Litovchenko, V.G. ; Efremov, A.A. ; Evtukh, A.A. ; Rassamakin, Yu.V. ; Klyui, M.I. ; Kostylov, V.P.

Інший ID: PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T

URI: http://dspace.nbuv.gov.ua/handle/123456789/119249

Посилання: Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ.

Дата: 2001

Завантажень: 343

Increase of planar homogeneity of multi-silicon structures by gettering treatments

Анотація:

Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.

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