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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures 
    Bacherikov, Yu.Yu.; Konakova, R.V.; Kolyadina, E.Yu.; Kocherov, A.N.; Okhrimenko, O.B.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of ...
  • Photoelectric properties of metal-porous silicon-silicon planar heterostructures 
    Brodovoi, A.V.; Brodovoi, V.A.; Skryshevskyi, V.A.; Bunchuk, S.G.; Khnorozok, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin ...
  • Noise in HgCdTe LWIR arrays 
    Sizov, F.F.; Golenkov, A.G.; Zabudsky, V.V.; Reva, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Mercury cadmium telluride (MCT) hybrid arrays for long-wavelength infrared (LWIR) applications with n+-p-diodes and n-channel charged coupled devices (CCD) silicon readouts were designed, manufactured and tested. Performance ...
  • On a doped transition layer in the space charge region of Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...
  • Alloy scattering in quantum well wire structures of semiconductor ternaries 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for ...
  • Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors 
    Glinchuk, K.D.; Prokhorovich, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound ...
  • Concentration anomaly of heat capacity in PbTe based solid solutions 
    Rogacheva, E.I.; Sinelnik, N.A.; Krivulkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The temperature dependences of the heat capacity in the Pb₁-xMnxTe and Pb₁-xGexTe (x = 0-0.04) solid solutions based on PbTe were obtained in the temperature range of 100-670 K. Pronounced peaks were observed in the isotherms ...
  • Temperature dependences of SnTe linear expansion coefficient 
    Rogacheva, E.I.; Popov, V.P.; Nashchekina, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained ...
  • Method of low-temperature rise of laser diode quality 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably ...
  • Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the framework of the theory for associated solutions comprising several complexes of various compositions in a liquid phase, analyzed are phase equilibria in Cd-Hg-Te systems. Checking this theory as to the description ...
  • Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses 
    Malesh, V.I.; Rubish, V.V.; Shpak, I.I.; Rubish, V.M.; Puha, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The results of investigating different parameters (of glasses in Ge-Sb-Se system have been given. The values of structural-sensitive molar IR polarization F have been calculated and its concentrational dependence has been ...
  • Investigations of characteristics of metal film based pyroelectric detectors implanted by Ar+ ions 
    Lysyuk, V.O.; Poperenko, L.V.; Staschuk, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Functional parameters and characteristics of pyroelectric detectors based on the system thin metal film - thick pyroelectric substrate are investigated. Such metals as Ni, Mo and Ti were used to increase absorption of such ...
  • Influence of Mn and Cr impurities on quasi-surface exciton states of BiI₃ layered single crystals 
    Dorogan, V.G.; Zhydkov, V.O.; Motsnyi, F.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of Mn and Cr impurities on quasi-surface excitons of BiI3 single crystals was studied. The broadening of their band was found which may be caused by ionization of quasi-surface excitons by the electric field ...
  • Growth conditions influence on thermally stimulated luminescence of sapphire single crystals 
    Blonskyy, I.V.; Vakhnin, A.Yu.; Danko, A.Ya.; Kadashchuk, A.K.; Kadan, V.N.; Sidelnikova, N.S.; Puzikov, V.M.; Skryshevskii, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying ...
  • Laser- and g-induced optical absorption of indium-doped sodium-borate glass 
    Kopyshinsky, A.V.; Okhrimenko, B.A.; Zelensky, S.E.; Danilchenko, B.O.; Shakhov, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The laser- and g-induced absorption spectra of indium-doped sodium-borate glass are investigated experimentally. The spectra are interpreted with the use of a model that includes three types of indium centers.
  • Modified optical OR and AND gates 
    Srinivasulu, Avireni (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work ...
  • Correlation method for pattern recognition 
    Yezhov, P.V.; Kuzmenko, A.V.; Komarov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A new approach towards solving the pattern recognition problems in hybrid optical/digital correlators is suggested. The method is based on the authors' know-how-principle of transforming the field intensity or amplitude ...
  • Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images 
    Girnyk, V.I.; Kostyukevich, S.A.; Shepeliavyi, P.E.; Kononov, A.V.; Borisov, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This work deals with Computer-Generated Rainbow Holograms (CGRHs), which can restore the 3D images under white light. They are devoted to include in Diffractive Optically Variable Image Devices (DOVIDs) that are currently ...
  • A universal automated complex for control and diagnostics of semiconductor devices and structures 
    Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in ...

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