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Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4
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Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
Інший ID:
PACS: 71.55.E, 78.55.E
Посилання:
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ.
Дата:
2002
Переглядів:
588
Завантажень:
410
Анотація:
Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type.
