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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5 за датою випуску

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5 за датою випуску

Результати 1-20 з 85

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Influence of g-irradiation on photoluminescence spectra of CdTe:Cl

Vakhnyak, N.D.; Krylyuk, S.G.; Kryuchenko, Yu.V.; Kupchak, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For ...
Properties and application of ultrasonic Lamb waves in CdxHg₁₋xTe plates

Lysiuk, I.O.; Machulin, V.F.; Olikh, Ja.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Group and phase velocities of the lowest orders of Lamb waves in <100>, <110> directions for (100) Cd₀.₂Hg₀.₈Te plates are calculated. Frequency dispersion of a₀ and s₀ Lamb modes velocities were measured on (111)-plates ...
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates

Tkach, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates ...
Interface roughness induced intrasubband scattering in a quantum well under an electric field

Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering ...
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs

Klimovskaya, A.I.; Grigor’ev, N.N.; Gule, E.G.; Dryha, Yu.A.; Litovchenko, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In ...
Current flow mechanisms in p-i-n structures based on cadmium telluride

Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

Tkachuk, A.I.; Tsarenko, O.N.; Ryabets, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth ...
Electronic band structure and magnetic susceptibility of Ge₁₋xSix solid solutions

Deibuk, V.G.; Shakhovtsova, S.I.; Shenderovski, V.A.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The magnetic susceptibility (MS) of single crystal Ge₁-xSix (0 < x < 0.1) solid solutions was investigated. Considerable anomalous MS behavior was found. Theoretical estimations of paramagnetic and diamagnetic parts were ...
Atomic and electronic structure of a-SiC

Ivashchenko, V.I.; Shevchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide ...
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation

Haccart, T.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Lead titanate zirconate Pb(Zr,Ti)O₃ (PZT) thin films were deposited on platinized silicon substrates by r.f. magnetron sputtering and crystallized with preferred (110) or (111) orientation by conventional annealing treatment. ...
III-V material solar cells for space application

Torchynska, T.V.; Polupan, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments ...
Silicon carbide LED

Vlaskina, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their ...
Study of supercapacitors with a double electrical layer based on activated carbon materials

Budzulyak, I.M.; Kovalyuk, Z.D.; Motsnyi, F.V.; Orletskyi, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

It is proposed ecologically pure technology to obtain activated carbon. On the base of this carbon the supercapacitors were manufactured. Their characteristics were determined and compare with analogs obtained using ...
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

Boltovets, N.S.; Kashin, G.N.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs ...
Light absorption by excited exciton states in layered InSe crystals

Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the ...
Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption

Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...
Polar magneto-optical Kerr effect studies of interlayer exchange coupling in Fe/Tb bilayers and Fe/Au/Tb trilayers

Shypil, E.V.; Pogorilyy, A.M.; Pogoryelov, Ye.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Interlayer exchange coupling was studied. The investigations were carried out on bilayer (Fe/Tb) and trilayer (Fe/Au/Tb) ultrathin film structures. The films on silica substrate were prepared by electron-beam evaporation ...
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si ...
Reststrahlen spectroscopy of MgAl₂O₄ spinel

Boguslavska, N.N.; Venger, E.F.; Vernidub, N.M.; Pasechnik, Yu.A.; Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Using IR reflectance spectroscopy and surface polariton spectroscopy in the reststrahlen region, we investigated Czochralski-grown MgAl₂O₄ spinel. The computer analysis of variance made for spectra enabled us to get a ...
Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals

Kunets, V.P.; Kulish, N.R.; Kunets, Vas.P.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

We have found that the long wavelength fundamental absorption edge of CdSXSe₁-x nanocrystals grown in an oxide glass follows to the generalized Urbach rule that takes into account both the dynamic (phonon induced) and ...

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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5 за датою випуску

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