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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • Regularities of visible photoluminescence creation in low-dimensional silicon structures 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Role of silicon oxide defects in emission process of Si-SiO₂ systems 
    Baran, M.; Bulakh, B.; Korsunska, N.; Khomenkova, L.; Yukhymchuk, V.; Sheinkman, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad ...
  • Singular optics methods for analysis of spatial structure of diffraction field of optical elements 
    Budnyk, O.P.; Lymarenko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper is devoted to developing methods of analytical and experimental investigations of diffraction and interference phenomena used in test systems for optical elements. The theoretical analysis and experimental results ...
  • Some properties of extremely restricted thermal radiation beams 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical peculiarities of the equilibrium thermal radiation have been considered within the black body model for the case of ultimate restrained photon flows inside an ideal ("lossless") optical communication channel. ...
  • Spatial-temporal peculiarities of periodical PILS in ferroelectric PR-crystals 
    Morozovska, A.N.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the paper we theoretically consider the dynamics of the inner field and the spatial-temporal features of periodical photoinduced light scattering in photo-ferroelectrics caused by stationary laser illumination. Not only ...
  • Stress-induced effects in light scattering by plasmons in p-type germanium 
    Poroshin, V.N.; Gaydar, A.V.; Abramov, A.A.; Tulupenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal ...
  • Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells 
    Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties ...
  • Structure and luminescence study of nanoporous silicon layers with high internal surface 
    Makara, V.A.; Melnichenko, M.M.; Svezhentsova, K.V.; Khomenkova, L.Yu.; Shmyryeva, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Study of DNA interaction with carbon nanotubes 
    Dovbeshko, G.I.; Repnytska, O.P.; Obraztsova, E.D.; Shtogun, Ya.V.; Andreev, E.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Structural characterisation of two different forms of carbon - graphite and single-walled carbon nanotubes (SWCNT) has been done with Raman and FTIR spectroscopy. Interaction of nucleic acids with graphite powder and SWCNT ...
  • Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics 
    Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ja.; Tartachnyk, V.P.; Pinkovs'ka, M.B.; Shakhov, O.P.; Shapar, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect ...
  • Synthesis, recording and metrology of laser beams with phase singularities 
    Ivanovskyy, A.A.; Basistiy, I.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The main task of the work was obtaining the high efficient diffraction elements to generate high quality laser beams with phase singularities. The method of recording such diffractive structures on the organic photoresist ...
  • Temperature dependence of luminescence pecularities in oxygen doped ZnTe films 
    Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour ...
  • The energy structure of free electrons for semiconductor in the field of cylindrical symmetry 
    Stakhira, J.M.; Stakhira, R.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The energetic structure of semiconductor free electrons in the field of cylindrical symmetry whose radial part is a sum of two components, which depend on radial coordinate according to quadratic and biquadratic laws has ...
  • The features of phonon component of linear dichroism in uniaxially strained silicon crystals 
    Serdega, B.K.; Venger, E.F.; Matyash, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral ...
  • Theory of the free-carrier absorption in quantum wires with boundary roughness scattering 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A theory of free carrier absorption is given for quantum wires when carriers are scattered by boundary roughness and the radiation field is polarized along the length of the wire. The free-carrier absorption coefficient ...
  • Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds 
    Manam, J.; Sharma, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...

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