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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Personalia Vadim Evgenovich Lashkaryov 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
  • Photo-microdomains in ferroelectrics: formation and light scattering caused by them 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We propose the theory of the micro-domains (MD) formation in ferroelectric photorefractive crystals appeared under steady illumination by laser beam perpendicular to the polar axis. The crystal has the donor level made ...
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • Polarization and angular peculiarities of IR emission of thin film semiconductor structures 
    Kollyukh, O.G.; Liptuga, A.I.; Morozhenko, V.O.; Pipa, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper thermal radiation from plane-parallel semiconductor layers was investigated. Shown is that spectra of thermal radiation from structures has an oscillating character caused by multi-beam interference. It was ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Phase equilibria in Cd-Hg-Te system are analyzed in the framework of the polyassociative solution model. Checking the mentioned model applicability to description of phase equilibria and search of system thermodynamical ...
  • Polymer films as sensitive coatings for quartz crystal microbalance sensors array 
    Koshets, I.A.; Kazantseva, Z.I.; Shirshov, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work reports on the results of investigation of quarts crystal microbalance sensors coated with polybutyl methacrylate and polyvinyl formal/ethylal to wide range of volatile organic compounds. Polymer film coated ...
  • Properties of the shallow D-centers in semiconductors with polar and covalent binding 
    Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • Regularities of visible photoluminescence creation in low-dimensional silicon structures 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Role of silicon oxide defects in emission process of Si-SiO₂ systems 
    Baran, M.; Bulakh, B.; Korsunska, N.; Khomenkova, L.; Yukhymchuk, V.; Sheinkman, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad ...
  • Singular optics methods for analysis of spatial structure of diffraction field of optical elements 
    Budnyk, O.P.; Lymarenko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper is devoted to developing methods of analytical and experimental investigations of diffraction and interference phenomena used in test systems for optical elements. The theoretical analysis and experimental results ...
  • Some properties of extremely restricted thermal radiation beams 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical peculiarities of the equilibrium thermal radiation have been considered within the black body model for the case of ultimate restrained photon flows inside an ideal ("lossless") optical communication channel. ...
  • Spatial-temporal peculiarities of periodical PILS in ferroelectric PR-crystals 
    Morozovska, A.N.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the paper we theoretically consider the dynamics of the inner field and the spatial-temporal features of periodical photoinduced light scattering in photo-ferroelectrics caused by stationary laser illumination. Not only ...
  • Stress-induced effects in light scattering by plasmons in p-type germanium 
    Poroshin, V.N.; Gaydar, A.V.; Abramov, A.A.; Tulupenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal ...
  • Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells 
    Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties ...
  • Structure and luminescence study of nanoporous silicon layers with high internal surface 
    Makara, V.A.; Melnichenko, M.M.; Svezhentsova, K.V.; Khomenkova, L.Yu.; Shmyryeva, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Study of DNA interaction with carbon nanotubes 
    Dovbeshko, G.I.; Repnytska, O.P.; Obraztsova, E.D.; Shtogun, Ya.V.; Andreev, E.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Structural characterisation of two different forms of carbon - graphite and single-walled carbon nanotubes (SWCNT) has been done with Raman and FTIR spectroscopy. Interaction of nucleic acids with graphite powder and SWCNT ...

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