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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Approximation of electro-optical hysteresis characteristics of ChLC 
    Rybalochka, A.; Chumachkova, M.; Sorokin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In order to select proper cholesteric liquid crystal (ChLC) materials and drive schemes for cholesteric liquid crystal displays (ChLCD), it is necessary to make the protracted experimental analysis of electro-optical ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Ellipsometry examination of copper alloys with transitive metals 
    Filipov, Y.V.; Staschuk, V.S.; Poperenko, L.V.; Vovchenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electron structure of copper alloys with 3d transition metals (Fe, Co and Cr) have been studied basing on elliposometrical measurement of D and Y in wide spectral range hn = 1.0–4.95 eV. Spectral dependences of Cu-Cr alloys ...
  • Gold and colloidal gold surface influence on dna conformational change 
    Dovbeshko, G.I.; Gnatyuk, O.P.; Chegel, V.I.; Shirshov, Y.M.; Kosenkov, D.V.; Andreev, E.A.; Tajmir-Riahi, H.A.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    DNA conformational changes caused by gold and colloidal gold surface have been studied by surface enhanced infrared spectroscopy (SEIRA), spectroscopy of plasmon resonance (SPR), atomic force microscopy (AFM) and principal ...
  • Liquid crystal modulator in the channel of a laser projection microscope 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Using the light modulator based on electrically controlled reflection in the interface between isotropic dielectric and nematic liquid crystal has been viewed. The optical scheme of a laser projection microscope (LPM) with ...
  • Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes 
    Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...
  • On the nature of the fine structure in emission spectra of XeCl laser 
    Blonskyy, I.V.; Gnatovskyy, A.V.; Zubrilin, N.G.; Pavlov, I.A.; Chernomorets, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced ...
  • Optical intersubband transitions in quantum wires with an applied magnetic field 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The intersubband optical absorption is investigated in parabolic quantum wires in the presence of a tilted magnetic fields. We show that for increasing magnetic field the intersubband absorption peak is shifted to higher ...
  • Optical properties of dielectric layers with CeO₂ 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The polycrystalline thin films CeO₂, WO₃, amorphous complex films WO₃ + CeO₂ with content of CeO₂ in the powder 10, 15 and 20 %, and CeO₂ + Dy₂O₃ with content of Dy₂O3 in the powder 10, 15 and 20 % are obtained by vacuum ...
  • Partial polarization switching in ferroelectrics-semiconductors with charged defects 
    Morozovska, A.N.; Eliseev, E.A.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical ...
  • Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigations 
    Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    By RF magnetron sputtering method the Pt/PZT-film/Pt:Ti-sublayer/SiO₂/Si-substrate structures were prepared and pyroelectric response amplitude and phase behaviour under external voltage application was investigated by ...
  • Possibility of a laser action under electrochemical excitation in a cell with a multilayer working electrode 
    Vasyanovitch, D.A.; Zholudov, Y.T.; Rozhitskii, N.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The possibility of laser action at the solution/working electrode interface in an electrochemical cell with modified electrode by multilayer active organic electrochemiluminescer is considered. Physical and mathematical ...
  • Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films 
    Gentsar, P.A.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after ...
  • Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses 
    Mateleshko, N.; Mitsa, V.; Borkach, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, ...
  • Solid solutions of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties 
    Paranchych, S.Yu.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Romanyuk, O.S.; Makogonenko, V.M.; Andriychuk, M.D.; Synylo, S.V.; Ivonyak, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Single crystals of CdxHg₁₋xTe:V:Mn, CdxHg₁₋xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical ...
  • Spectrum of electron-hole pair in quantum dots of a semiconductor nanolaser: theory 
    Pokutnyi, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theory of laser generation on size-quantization levels in semiconductor quantum dots put in a semiconductor matrix is developed. The size of quantum dots mass of which comprises the active sphere of an injection laser ...
  • Structural dependence of CsI(Tl) film scintillation properties 
    Ananenko, A.; Fedorov, A.; Lebedinsky, A.; Mateychenko, P.; Tarasov, V.; Vidaj, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Scintillating CsI(Tl) films were obtained by vacuum deposition on single crystalline LiF substrates and non-orienting glass substrates. Their structure and morphology were examined by X-ray diffraction and scanning electron ...
  • The effect of structural-kinetic features of hologram formation on holographic properties of photopolymers 
    Smirnova, T.; Sakhno, O.; Lozenko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A thermodynamic model of the holographic recording process in photopolymers have been developed. By the example of photopolymerizing compositions PPC-488 containing oligoetheracrylates and neutral components (NC) we have ...
  • The influence of ion implantation by phosphorous on structural changes in porous silicon 
    Swiatek, Z.; Lytvynchuk, I.; Fodchuk, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and ...
  • Theory of free-carrier absorption in the presence of a quantizing magnetic field in quasi-one-dimensional quantum well structures 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The theory of free-carrier absorption is given for a quasi one-dimensional semiconducting structures in a quantizing magnetic field for the case when carriers are scattered by polar optical phonons and acoustic phonons ...

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