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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • An improved contribution to optimize Si and GaAs solar cell performances 
    Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...
  • Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ 
    Kondrat, O.; Popovich, N.; Dovgoshej, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. ...
  • Electrodynamic linear response of a superconductor film located at the surface of semiconductor 
    Lozovski, V.; Reznik, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The susceptibility of thin superconductor film was obtained. The absorption of energy of external electromagnetic field by superconductor film located at a semiconductor substrate was calculated. A new approach to calculation ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell 
    Hashim, U.; Ayub, R.M.; On, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. ...
  • Ferromagnetism induced in diluted A₁₋xMnxB semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) ...
  • Individual glow bands of Mn²⁺ ions photoluminescence in plastically deformed ZnS single crystals 
    Prokofiev, T.A.; Kovalenko, A.V.; Polezaev, B.A.; Bulanyi, M.F.; Gorban, A.A.; Hmelenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The spectra of a photoluminescence (PL) in plastically deformed (PD) ZnS:Mn single crystals are investigated. It is shown that the PD processes cause change of a quantitative ratio between separate types of glow manganese ...
  • Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons 
    Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
  • Investigation of β-CdP₂ crystals by laser spectroscopy methods 
    Patskun, I.I.; Slipukhina, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    β-CdP₂ CdP₂ single crystal of tetragonal modification is investigated by methods of lasermodulated spectroscopy at 293 K. The spectra of coherent two-photon absorption (TPA) have been measured and their theoretical ...
  • Laser-induced photoconductivity of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Bila, R.V.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of a strong electromagnetic wave on the kinetic phenomena in ferromagnetic semiconductors (FMSC) is considered. To sequentialy consider this influence, we obtained quantum kinetic equations for electrons and ...
  • Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs 
    Slutskii, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase ...
  • Luminescence properties of KAlP₂O₇ crystals doped with chromium ions 
    Gomenyuk, O.V.; Nedilko, S.G.; Stus, N.V.; Chukova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Luminescence properties of the KAlP₂O₇ crystals doped with the chromium ions were investigated. Luminescence spectra consist of two main bands: one of them lies in the blue-green spectral region and the other lies in the ...
  • Metrological support of satellite-borne UV-spectrometry using a backscattering technique 
    Vashchenko, V.; Patlashenko, Zh.; Chernysh, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Methods and physicotechnical facilities for examination, calibration and metrological testing of the main power spectral characteristics (total spectral sensitivity, scattered stray radiation, dynamic range) of the ...
  • Multiple scattering effect on luminescence of the dyed polymer matrix 
    Tikhonov, E.; Yashchuk, V.; Prygodjuk, O.; Bezrodny, V.; Filatov, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The luminescence properties of the Rodamine 6G in strongly scattering matrix in dependence of the medium parameters were examined. The luminescence spectrum of this object was found to be dependent on the scattering particle ...
  • Nucleation, growth and transformation of microdefects in FZ-Si 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at ...
  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Properties of optical microsensor based on observation of whispering-gallery modes 
    Datsyuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Formulae for the intensity of the resonant spontaneous electric-dipole emission are derived in the framework of classical electrodynamics and quantum optics making allowance for inhomogeneous light absorption. Using these ...
  • Recording of high efficiency diffraction gratings by He-Ne laser 
    Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...
  • Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures 
    Vlasenko, N.A.; Purwins, H.-G.; Denisova, Z.L.; Kononets, Ya.F.; Niedernostheide, F.-J.; Veligura, L.I.; Zuccaro, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...

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