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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Accurate numerical modelling the GaAs MESFET current-voltage characteristics 
    Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
  • Active layer – semi-insulating substrate interface effect on GaAs MESFET components 
    Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
  • All-optical signal processing in photonic structures with shifting bands 
    Glushko, E.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the principal scheme of all-optical adder based on the dependence of electromagnetic spectra in photonic bandgap materials containing optically nonlinear layers on the light signal intensity. The system consisting ...
  • An improved contribution to optimize Si and GaAs solar cell performances 
    Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...
  • Approximation of electro-optical hysteresis characteristics of ChLC 
    Rybalochka, A.; Chumachkova, M.; Sorokin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In order to select proper cholesteric liquid crystal (ChLC) materials and drive schemes for cholesteric liquid crystal displays (ChLCD), it is necessary to make the protracted experimental analysis of electro-optical ...
  • A T-matrix many-particle theory for coherently coupled superlattice optics 
    Schmielau, T.; Pereira Jr., M.F.; Henneberger, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The high- order Coulomb correlations described by T-matrix diagrams in both carrier occupation and polarization functions are studied here with a Keldysh- Green’s Functions formalism. Numerical applications for low dimensional ...
  • Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ 
    Kondrat, O.; Popovich, N.; Dovgoshej, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. ...
  • Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system 
    Tomashik, Z.F.; Lukiyanchuk, E.M.; Tomashik, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution ...
  • Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures 
    Svechnikov, G.S.; Zavyalova, L.V.; Roshchina, N.N.; Prokopenko, I.V.; Berezhinsky, L.I.; Khomchenko, V.S.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New composite structures containing ZnS, CdS nanoparticles were prepared with bright light-blue colour of a luminescence. The structures were formed by spraying organic solution of zinc or cadmium ditiocarbamate onto ...
  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model ...
  • Development and investigation of LC light shutters for a welding automatic mask 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Elements of technology to produce liquid crystal (LC) light shutters for a welding automatic mask with the built-in transparent heater for operating LC layer were developed. Experimental samples of light shutters were ...
  • Diluted magnetic А₁₋xMnxВ semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrodynamic linear response of a superconductor film located at the surface of semiconductor 
    Lozovski, V.; Reznik, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The susceptibility of thin superconductor film was obtained. The absorption of energy of external electromagnetic field by superconductor film located at a semiconductor substrate was calculated. A new approach to calculation ...
  • Ellipsometric control of quality of polished MgF₂ optical ceramics 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Ellipsometry examination of copper alloys with transitive metals 
    Filipov, Y.V.; Staschuk, V.S.; Poperenko, L.V.; Vovchenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electron structure of copper alloys with 3d transition metals (Fe, Co and Cr) have been studied basing on elliposometrical measurement of D and Y in wide spectral range hn = 1.0–4.95 eV. Spectral dependences of Cu-Cr alloys ...
  • Erratum: to the paper “Influence of elastic deformation on the residual ellipticity of polished optical materials” 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...

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