Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2
→
Переглянути статтю

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Belyaev, A.E. ; Foxon, C.T. ; Novikov, S.V. ; Makarovsky, O. ; Eaves, L. ; Kappers, M.J. ; Barnard, J.S. ; Humphreys, C.J. ; Danylyuk, S.V. ; Vitusevich, S.A. ; Naumov, A.V.

Інший ID: PACS: 85.30.Mn, 85.30.Kk

URI: http://dspace.nbuv.gov.ua/handle/123456789/118170

Посилання: Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.

Підтримка: This work was carried out in Nottingham University under EPSRC contract GR/R46465. The authors would also like to acknowledge the contributions of Mr. R.I. Dykeman, Mr. J.S. Chazuhan, Mr. D. Taylor and Mr. J.R. Middleton for device fabrication. One of the authors (А.E.В) acknowledges the Royal Society and Deutsche Forschungsgemeinschaft for research grants. The work in FZJ was supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (monitored by Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (Project KL 1342). The work at V. Lashkaryov Institute of Semiconductor Physics in Kiev was supported by CRDF Project No. UE2-2439-KV-02.

Дата: 2004

Завантажень: 489

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Анотація:

Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures.

Показати повний запис статті