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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅ 
    Kondrat, O.; Popovich, N.; Dovgoshej, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. ...
  • Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system 
    Tomashik, Z.F.; Lukiyanchuk, E.M.; Tomashik, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution ...
  • Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures 
    Svechnikov, G.S.; Zavyalova, L.V.; Roshchina, N.N.; Prokopenko, I.V.; Berezhinsky, L.I.; Khomchenko, V.S.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New composite structures containing ZnS, CdS nanoparticles were prepared with bright light-blue colour of a luminescence. The structures were formed by spraying organic solution of zinc or cadmium ditiocarbamate onto ...
  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model ...
  • Development and investigation of LC light shutters for a welding automatic mask 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Elements of technology to produce liquid crystal (LC) light shutters for a welding automatic mask with the built-in transparent heater for operating LC layer were developed. Experimental samples of light shutters were ...
  • Diluted magnetic А₁₋xMnxВ semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Effects of LO-phonon confinement on electron mobility in GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrodynamic linear response of a superconductor film located at the surface of semiconductor 
    Lozovski, V.; Reznik, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The susceptibility of thin superconductor film was obtained. The absorption of energy of external electromagnetic field by superconductor film located at a semiconductor substrate was calculated. A new approach to calculation ...
  • Ellipsometric control of quality of polished MgF₂ optical ceramics 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Ellipsometry examination of copper alloys with transitive metals 
    Filipov, Y.V.; Staschuk, V.S.; Poperenko, L.V.; Vovchenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electron structure of copper alloys with 3d transition metals (Fe, Co and Cr) have been studied basing on elliposometrical measurement of D and Y in wide spectral range hn = 1.0–4.95 eV. Spectral dependences of Cu-Cr alloys ...
  • Erratum: to the paper “Influence of elastic deformation on the residual ellipticity of polished optical materials” 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell 
    Hashim, U.; Ayub, R.M.; On, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. ...
  • Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides 
    Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
  • Ferromagnetism induced in diluted A₁₋xMnxB semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) ...
  • Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals 
    Ostapov, S.E.; Rarenko, I.M.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient ...
  • Gold and colloidal gold surface influence on dna conformational change 
    Dovbeshko, G.I.; Gnatyuk, O.P.; Chegel, V.I.; Shirshov, Y.M.; Kosenkov, D.V.; Andreev, E.A.; Tajmir-Riahi, H.A.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    DNA conformational changes caused by gold and colloidal gold surface have been studied by surface enhanced infrared spectroscopy (SEIRA), spectroscopy of plasmon resonance (SPR), atomic force microscopy (AFM) and principal ...

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