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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Ivchenko, V.V.; Sergeev, A.N.; Elnik, V.S.; Chuiko, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The peculiarities of quantum oscillations in bulk semiconductors with Cnv symmetry caused by the lack of their symmetry centre are considered. A quasi-qubic model is used for finding the magnetic levels. The algorithm for ...
  • Berezhinsky, L.I.; Yukhymchuk, V.A.; Maslov, V.P.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The interface of ZERODUR ceramics and thin aluminium film was investigated by Raman and secondary ion mass-spectroscopy techniques. Possible chemical reactions at the interface is briefly analyzed and compared with ...
  • Yezhov, P.V.; Kuzmenko, A.V.; Smirnova, Т.N.; Ivanovskyy, A. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The method of pattern recognition based on replacement of object images incoming to the correlator by object-dependent synthesized phase objects calculated using the iterative Fourier-transform algorithm was developed by ...
  • El Haddad, A.; Diouri, J.; Taqi, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is ...
  • P.P., Moskvin; L.V., Rashkovetskiy; A.V., Stronski (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical ...
  • Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Borblik, V. L.; Shwarts, Yu. M.; Shwarts, M. M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, ...
  • Tovstyuk, N.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. ...
  • Klad'ko, V.P.; Lytvyn, P.M.; Osipyonok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes ...
  • Zubrilin, N.G.; Osypov, S.I.; Pavlov, I.A.; Chernomorets., M.P.; Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The influence of the isotopic composition of active medium on a lasing spectrum of a XeCl laser has been investigated. Spectra of spontaneous and stimulated emissions for monoisotopic ¹²⁴Xe³⁵Cl molecules were measured. The ...
  • Poroshin, V.N.; Sarbey, O.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration ...

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