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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron ...
  • Novel SnO₂ based optical sensor for detectin of low ammonia concentration in water at room temperatures 
    Pisco, M.; Consales, M.; Viter, R.; Smyntyna, V.; Campopiano, S.; Giordano, M.; Cusano, A.; Cutolo, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the work, presented are preliminary experimental results on the capability of a metal oxide (MO) based optical sensor to perform ammonia detection in water environment at room temperature. The electro-spray pyrolysis ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Optical properties of p-type porous GaAs 
    Kidalov, V.V.; Beji, L.; Sukach, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. ...
  • Parametrized Equations for Excitons in Quantum Wires 
    El Haddad, A.; Diouri, J.; Taqi, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is ...
  • Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction 
    Karimov, A.V.; Yodgorova, D.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different ...
  • Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers 
    Koval'chuk, A.V.; Shevchuk, A.F.; Naiko, D.A.; Koval'chuk, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ...
  • Photovoltaic and optical properties of a polymer - PbS nanocomposite 
    Lutsyk, P.; Dzura, L.; Kutsenko, A.; Vertsimakha, Ya.; Sworakowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Photovoltaic and optical properties of a polymer-PbS nanoparticles in polyvinyl alcohol (PVA) films and the effect of annealing in air at various temperatures on these properties are studied in this work. In the range of ...
  • Physico-Chemical model and computer simulations of silicon nanowire growth 
    Efremov, A.; Klimovskaya, A.; Kamins, T.; Shanina, B.; Grygoryev, K .; Lukyanets, S . (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas ...
  • p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy 
    Sapaev, B.; Saidov, A.S.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the ...
  • Polaron effects in exchange clusters (V²⁺ - F⁻ - V²⁺ in KMgF₃) 
    Kashirina, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have calculated the phonon contribution to the energy of a superexchange. It is shown that the phonon contribution to the exchange interaction is comparable on the order of magnitude with the Coulomb superexchange. The ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system 
    P.P., Moskvin; L.V., Rashkovetskiy; A.V., Stronski (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical ...
  • Polymorphism in chalcogenides of alkalineearth metals 
    Drozdov, V.А.; Pozhivatenko, V.V.; Drozdov, М.А.; Kovalchuk, V.V.; Moiseev, L.M.; Moiseeva, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Quadric hologram-based self-conjugation of vortex beams 
    Polyanskii, P.V.; Felde, Ch.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Self-conjugation of singular (vortex) beams by a static nonlinearly recorded hologram is reported. Diagnostics of phase-conjugated vortices is implemented using an original technique based on Young’s model of diffraction ...
  • Radiation power spectral distribution of two electrons moving in magnetic fields 
    Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Revealing the hopping mechanism of conduction in heavily doped silicon diodes 
    Borblik, V. L.; Shwarts, Yu. M.; Shwarts, M. M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, ...
  • Review of monograph 
    Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Review of monograph: A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova. "Photoconverters with AlGaAs/GaAs Heterojunction on Textured ...
  • Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality 
    Tovstyuk, N.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. ...

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