Porous nanostructured InP: technology, properties, application

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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Porous nanostructured InP: technology, properties, application

Arsentyev, I. N. ; Bobyl, A.B. ; Konnikov, S.G. ; Tarasov, I.S. ; Ulin, V.P ; Shishkov, M.V. ; Boltovets, N.S. ; Ivanov, V.N. ; Belyaev, A.E. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Kamalov, A.B. ; Lytvyn, P.M. ; Markovskiy, E.P. ; Milenin, V.V. ; Red’ko, R.A.

Інший ID: PACS 81.05.Rm

URI: http://dspace.nbuv.gov.ua/handle/123456789/121572

Посилання: Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.

Підтримка: The work was made in the framework of the Russia−Ukraine Program on Nanophysics and Nanoelectronics.

Дата: 2005

Завантажень: 469

Porous nanostructured InP: technology, properties, application

Анотація:

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.

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