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Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 4
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Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication
Інший ID:
PACS 43.35.+d, 73.61.Ga, 73.50.Jt
Посилання:
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ.
Дата:
2006
Переглядів:
626
Завантажень:
234
Анотація:
Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed.
