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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за назвою

Сортувати за: Порядок: Результатів:

  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta 
    Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
  • Photoabsorption and photoconductivity in C₆₀ layers 
    Kanev, St.; Nenova, Z.; Koprinarov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A complex investigation of the photoconductivity of fullerene films, prepared by thermal evaporation in vacuum, was carried out. The investigated films contain predominantly C₆₀ in various phases as shown elsewhere. The ...
  • Photoelectric properties of single crystals Ag₃In₅Se₉ 
    Huseynov, A.H.; Mamedov, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and ...
  • Photoemission spectra of indium selenide 
    Katerynchuk, V.M.; Kovalyuk, M.Z.; Tovarnitskii, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation ...
  • Photoresponse in Ge/Si nanostructures with quantum dots 
    Nikolenko, A.S.; Kondratenko, S.V.; Vakulenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed ...
  • Polarizability of D+X complex in bulk semiconductors 
    Katih, M.; Diouri, J.; El Haddad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation ...
  • Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system 
    Moskvin, P.P.; Khodakovsky, V.V.; Rashkovets’kyi, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    p −T− x diagram of Cd-Hg-Te system is analyzed in the framework of the polyassociative solution model. The temperature dependence of the dissociation constant for ternary complexes, which describes the mixing effects, was ...
  • Radar cross section study from wave scattering structures 
    Redadaa, S.; Boualleg, A.; Benslama, N. Merabtine M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Radar remote sensing deals with the extraction of object information from electromagnetic wave parameters. To fully exploit the potential of acquiring quantitative information requires a detailed description of the microwaves ...
  • Simulation of multiwave pumped fiber Raman amplifiers 
    Felinskyi, G.S.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The design model for development of optical fiber Raman amplifiers with the multiwavelength pumping scheme is proposed in this work. Our simulation based on the oscillator theory and spectroscopic model for the analysis ...
  • Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials 
    Denbnovetsky, S.V.; Slobodyan, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details ...
  • Simulation of strain fields in GaSb/InAs heteroepitaxial system 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network ...
  • Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group 
    Vlasov, A.P.; Bonchyk, A.Yu.; Fodchuk, I.M.; Barcz, A.; Swiatek, Z.T.; Zaplitnyy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the ...
  • Spin-dependent transport in magnetic sandwiches in the effective-mass approximation 
    Los’, V.F.; Saltanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A theory describing a spin-dependent transport of electrons through a thin metallic (or insulator) nonmagnetic layer sandwiched between two ferromagnets is developed in the ballistic regime and current-perpendicular-to-plane ...
  • Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K 
    Abbasov, Sh.M.; Agaverdiyeva, Y.T.; Kerimova, T.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, ...
  • Surface microrelief obtained by composed target deposition for LC molecules alignment 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are ...
  • Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x 
    Venger, E.F.; Knorozok, L.M.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and ...
  • The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure 
    Berrah, S.; Abid, H.; Boukortt, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The ...
  • The influence of Cr concentration on time resolution of GaAs detectors 
    Fedorenko, L.L.; Linnik, L.F.; Linnik, L.G.; Yusupov, M.M.; Solovyov, E.A.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic ...
  • The influence of surface defects on the pinhole formation in silicide thin film 
    Belousov, I.V.; Grib, A.N.; Kuznetsov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences ...

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