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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • Organic iso-type pentacene – lead phthalocyanine heterostructures 
    Vertsimakha, Ya.I.; Lutsyk, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The photovoltaic properties of organic iso-type heterostructures based on pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at different substrate temperatures (Ts) are investigated. It is shown ...
  • Out-of-plane optical transmittance of 2D photonic macroporous silicon structures 
    Karachevtseva, L.A.; Glushko, A.E.; Ivanov, V.I.; Lytvynenko, O.O.; Onishchenko, V.F.; Parshin, K.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical transmission spectra of 2D photonic macroporous silicon structures are investigated. The absolute bandgap for high values of the out-of-plane component kz is situated between the second and third photonic bands. ...
  • Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation 
    Moscal, D.S.; Fedorenko, L.L.; Yusupov, M.M.; Golodenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a ...
  • Photoconductivity in macroporous silicon with regular structure of macropores 
    Ivanov, V.I.; Karachevtseva, L.A.; Karas, N.I.; Lytvynenko, O.A.; Parshin, K.A.; Sachenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon ...
  • Polarization analysis of birefringence in uniaxially deformed silicon crystals 
    Berezhinsky, L.I.; Berezhinsky, I.L.; Pipa, V.I.; Matyash, I.Ye.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance ...
  • Polarized optical transmittance spectra of nonlinear thiogallate crystals near "isotropic point" 
    Kushnir, O.S.; Dzendzelyuk, O.S.; Hrabovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of researches of the polarized optical transmittance spectra of nonlinear thiogallate crystals near the “isotropic point” are represented and discussed
  • Qualitative analysis of electron states in nanoobjects 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Tendencies of change of the electron energy states at transition from a “rigid” nanoobject to a nanoobject, in which taken into account is the influence of medium on it, are considered. Proposed is the model describing the ...
  • Radiative recombination of the PVK/C60 molecular complexes with the radiation damages 
    Коbus, E.S.; Dmytrenko, O.P.; Kulish, N.P.; Prylutskyy, Yu.I.; Belyy, N.M.; Syromyatnikov, V.G.; Studzinskyy, S.L.; Zabolotnyy, M.A.; Gryn'ko, D.A.; Shchur, D.V.; Shlapatskaya, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The relaxation processes of electronic excitations in the films composed from a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes (PVC/C₆₀) with different contents of nanocluster molecules ...
  • Simulation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures 
    Kosobutskyy, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The method to obtain analytical expressions for envelope functions in spectra of normal incidence light reflection and transmission by single-layer structures is proposed
  • Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure 
    Grushko, E.V.; Maslyanchuk, O.L.; Mathew, X.; Motushchuk, V.V.; Kosyachenko, L.A.; Streltsov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe ...
  • Spin polarization in semimagnetic semiconductor two barrier spin filters 
    Lev, S.B.; Sugakov, V.I.; Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The spin-dependent tunneling of electrons through the CdMgTe-based twobarrier resonant tunneling system with a semimagnetic CdMnTe well is studied. The level splitting in the semimagnetic well under an external magnetic ...
  • Template-based growth of TiO₂ nanorods by sol-gel process 
    Sadeghzadeh-Attar, A.; Sasani Ghamsari, M.; Hajiesmaeilbaigi, F.; Mirdamadi, Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the preparation of TiO2 nanorods by sol-gel-template process has been considered. The prepared sols were characterized by using FTIR spectroscopy, and the obtained nanorods were characterized by X-ray ...
  • The current density order based on the Ginzburg-Landau description 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties 
    Horvat, G.T.; Kondratenko, O.S.; Loja, V.Ju.; Myholynets, I.M.; Rosola, I.J.; Jurkovуch, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure ...
  • The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb₁₋xMnxTe film 
    Abbasov, Sh.M.; Nuruyev, I.R.; Tagiyev, T.B.; Agaverdiyeva, G.T.; Kerimova, T.I.; Ismayilova, G.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the ...
  • The influence of size effects on thin films local piezoelectric response of thin films 
    Morozovska, A.N.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We discuss the influence of size effects on the local piezoelectric response of thin films. In calculations of the electrostatic potential in the triple system “PFM probe tip – film – substrate,” the effective point ...
  • The radiation hardness of pulled silicon doped with germanium 
    Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...
  • Thermofield Cr→Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures 
    Vlasenko, N.A.; Oleksenko, P.F.; Denisova, Z.L.; Mukhlyo, M.A.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, an anomalous strong increase of the Cr²⁺ emission intensity (I) with increasing the applied voltage (V) has been discovered in ZnS:Cr thin-film electroluminescent structures (TFELS) instead of the ...
  • The role of multicomponent surface diffusion in growth and doping of silicon nanowires 
    Efremov, A.; Klimovskaya, A.; Hourlier, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events ...
  • Using ion beams for creation of nanostructures on the surface of high-stable materials 
    Gorbov, I.V.; Petrov, V.V.; Kryuchyn, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface ...

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